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Indium(II) selenide (InSe) is an inorganic compound composed of indium and selenium. It is a III-VI layered semiconductor. The solid has a structure consisting of two-dimensional layers bonded together only by van der Waals forces. Each layer has the atoms in the order Se-In-In-Se.

Potential applications are for field effect transistors, optoelectronics, photovoltaic, non-linear optics, strain gauges, and methanol gas sensors.

Formation

Indium(II) selenide can be formed via a number of different methods. A method to make the bulk solid is the Bridgman/Stockbarger method, in which the elements indium and selenium are heated to over 900 °C in a sealed capsule, and then slowly cooled over about a month. Another method is electrodeposition from a water solution of indium(I) sulfate and selenium dioxide.

Properties

There are three polytopes or crystal forms. β, ε are hexagonal with unit cells spanning two layers. γ has rhombohedral crystal system, with the unit cell including four layers.

β-Indium(II) selenide can be exfoliated into two-dimensional sheets using sticky tape. In a vacuum these form smooth layers. However, when exposed to air, the layers become corrugated because of chemisorption of air molecules. Exfoliation can also take place in isopropanol liquid.

Indium (II) selenide is stable in ambient conditions of oxygen and water vapour, unlike many other semiconductors.

Doping

The properties of indium(II) selenide can be varied by way of altering the exact ratio of elements from 1:1, creating vacancies. It is hard to get an exact equality. The properties can be compensated by transition element doping. Other elements that can be included in small concentrations are boron, silver, and cadmium.

References

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2. ^ Politano, A.; Campi, D.; Cattelan, M.; Ben Amara, I.; Jaziri, S.; Mazzotti, A.; Barinov, A.; Gürbulak, B.; Duman, S.; Agnoli, S.; Caputi, L. S.; Granozzi, G.; Cupolillo, A. (December 2017). "Indium selenide: an insight into electronic band structure and surface excitations". Scientific Reports. 7 (1): 3445. Bibcode:2017NatSR...7.3445P. doi:10.1038/s41598-017-03186-x. PMC 5469805. PMID 28611385.
3. Marvan, Petr; Mazánek, Vlastimil; Sofer, Zdeněk (2019). "Shear-force exfoliation of indium and gallium chalcogenides for selective gas sensing applications". Nanoscale. 11 (10): 4310–4317. doi:10.1039/C8NR09294J. PMID 30788468. S2CID 206138673.
4. ^ Boukhvalov, Danil; Gürbulak, Bekir; Duman, Songül; Wang, Lin; Politano, Antonio; Caputi, Lorenzo; Chiarello, Gennaro; Cupolillo, Anna (5 November 2017). "The Advent of Indium Selenide: Synthesis, Electronic Properties, Ambient Stability and Applications". Nanomaterials. 7 (11): 372. doi:10.3390/nano7110372. PMC 5707589. PMID 29113090.
5. Demir, Kübra Çınar; Demir, Emre; Yüksel, Seniye; Coşkun, Cevdet (December 2019). "Influence of deposition conditions on nanostructured InSe thin films". Current Applied Physics. 19 (12): 1404–1413. Bibcode:2019CAP....19.1404D. doi:10.1016/j.cap.2019.09.008. S2CID 203143299.
6. Dmitriev, A. I.; Vishnjak, V. V.; Lashkarev, G. V.; Karbovskyi, V. L.; Kovaljuk, Z. D.; Bahtinov, A. P. (March 2011). "Investigation of the morphology of the van der Waals surface of the InSe single crystal". Physics of the Solid State. 53 (3): 622–633. Bibcode:2011PhSS...53..622D. doi:10.1134/S1063783411030085. S2CID 121113583.
7. Petroni, Elisa; Lago, Emanuele; Bellani, Sebastiano; Boukhvalov, Danil W.; Politano, Antonio; Gürbulak, Bekir; Duman, Songül; Prato, Mirko; Gentiluomo, Silvia; Oropesa-Nuñez, Reinier; Panda, Jaya-Kumar; Toth, Peter S.; Del Rio Castillo, Antonio Esau; Pellegrini, Vittorio; Bonaccorso, Francesco (June 2018). "Liquid-Phase Exfoliated Indium-Selenide Flakes and Their Application in Hydrogen Evolution Reaction". Small. 14 (26): 1800749. arXiv:1903.08967. doi:10.1002/smll.201800749. PMID 29845748. S2CID 44172633.
8. Ertap, Hüseyin; Karabulut, Mevlut (5 December 2018). "Structural and electrical properties of boron doped InSe single crystals". Materials Research Express. 6 (3): 035901. doi:10.1088/2053-1591/aaf2f6. S2CID 105206868.
9. Gürbulak, Bekir; Şata, Mehmet; Dogan, Seydi; Duman, Songul; Ashkhasi, Afsoun; Keskenler, E. Fahri (November 2014). "Structural characterizations and optical properties of InSe and InSe:Ag semiconductors grown by Bridgman/Stockbarger technique". Physica E: Low-dimensional Systems and Nanostructures. 64: 106–111. Bibcode:2014PhyE...64..106G. doi:10.1016/j.physe.2014.07.002.
10. Evtodiev, Igor (2009). "Excitonic absorption of the light in heterojunctions Bi 2 O 3-InSe".

• Selenides
• Indium compounds